TiN films prepared by nitrogen implantation on Ti-coated fused SiO2
- 30 November 1985
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 12 (5) , 353-359
- https://doi.org/10.1016/0165-1633(85)90005-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Nitrogen implantation of metalsJournal of Applied Physics, 1985
- Diffusion of nitrogen in ion-implanted chromium and tungstenApplied Physics A, 1984
- Diffusion of nitrogen in vanadium and niobiumApplied Physics A, 1984
- A new measurement of the 429 keV 15N(p,αγ)12C resonance. Applications of the very narrow width fouNd to 15N and 1H depth location: I. Resonance width measurementNuclear Instruments and Methods in Physics Research, 1983
- Diffusion of nitrogen in α-TiApplied Physics Letters, 1983
- Optical properties of CVD-coated TiN, ZrN and HfNSolar Energy Materials, 1983
- Properties of TiN obtained by N+2 implantation on Ti-coated Si wafersApplied Physics Letters, 1982
- Heat mirror coatings for energy conserving windowsSolar Energy Materials, 1981
- Sputtering yield measurementsPublished by Springer Nature ,1981
- Ranges ofions in ten metals measured by () resonance broadeningPhysical Review B, 1978