Fe ion dose dependence of deep levels in Si p+-n junction
- 1 October 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (10) , 5430-5433
- https://doi.org/10.1063/1.327289
Abstract
A peak of deep level transient spectroscopy (DLTS) spectrum obtained from a silicon p+‐n junction implanted with iron was investigated and it was found that the energy level and the capture cross section of the trap varied with the iron dose. This is due to a change, with dose, of the concentration ratio of two kinds of traps, a process induced (E3:Ec−0.50 eV) and an iron‐associated center (E2:Ec−0.58 eV), which have nearly the same emission rate and give only a single peak to the DLTS spectrum. The concentration of the E2 trap depended on the iron dose, while that of the E3 trap did not.This publication has 5 references indexed in Scilit:
- Primary defects in low-fluence ion-implanted siliconApplied Physics Letters, 1980
- Photoconductivity and Hall-effect of iron-diffused siliconApplied Physics A, 1978
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Experiments on the origin of process−induced recombination centers in siliconJournal of Applied Physics, 1975
- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957