Primary defects in low-fluence ion-implanted silicon
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1) , 48-50
- https://doi.org/10.1063/1.91311
Abstract
Electrical defect energy levels created by low‐fluence ionic impact were investigated using transient capacitance spectroscopy. The ion species used are 1H+, 2H+2, 4He+, 11B+, and 31P+. The defect levels were identified by comparing these levels with those obtained in electron‐irradiated structures. The defect production yields for various ion species and for different fluences were obtained. Only a small fraction of the carrier removal could be accounted for by the observed DLTS levels.Keywords
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