Distribution of irradiation damage in silicon bombarded with hydrogen

Damage distribution in [001] silicon crystals bombarded with a fluence of ${10}^{16}$/${\mathrm{cm}}^2$ to ${10}^{17}$ ${\mathrm{cm}}^2$ ${\mathrm{H}}^{+}$ ions at 50-250 keV and at implantation temperatures from -170 to 600°C was measured by use of high-energy ${}_{}{}^4{}_{}{}^{}\mathrm{He}_{}^{+}{}_{}{}^{}$ channeling. The depth profiles were verified by spreading-resistivity measurements, by radiation-enhanced diffusion measurements, and by sectioning of a sample on which blisters had formed. The hydrogen profile, measured by ${}_{}{}^{15}{}_{}{}^{}\mathrm{N}(p,\alpha \gamma ){}_{}{}^{12}{}_{}{}^{}\mathrm{C}$ reaction, agrees with the damage distribution. For 200 keV the depth measurements agree with values calculated by theoretical methods, and the depth distribution is 30%-60% narrower.