RADIATION-ENHANCED DIFFUSION OF BORON IN SILICON
- 15 October 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (8) , 246-248
- https://doi.org/10.1063/1.1652986
Abstract
Boron was predeposited in silicon substrates by conventional diffusion techniques and then redistributed by bombarding the substrates with 10‐ and 50‐keV protons. The substrates were held at a fixed temperature in the range 500 to 700°C for the duration of the bombardment. The resulting impurity profiles were determined. The low‐energy impurity profiles are characterized by very abrupt junctions while the high‐energy impurity profiles are characterized by long tails. No variation of either the 10‐ or the 50‐keV impurity profiles with temperature was seen over the range given above.Keywords
This publication has 2 references indexed in Scilit:
- Impurity distribution profiles in ion-implanted siliconCanadian Journal of Physics, 1968
- Radiation Enhanced Diffusion in SolidsJournal of Applied Physics, 1958