Enhanced diffusion and the dose rate dependence of Sb and P in Si by proton irradiation

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Abstract
Enhanced diffusion of both diffused impurities and n + substrate impurities Sb and P in Si by proton irradiation is observed and analyzed in terms of steady state excess vacancy distribution. A simple Gaussian diffusion coefficient is employed for the analysis. The standard deviation of 1 μm or a little smaller for the Gaussian diffusion coefficient is reasonable for 300 to 450 kV proton irradiation at 900°C. The diffusion coefficients obtained for both diffused P and substrate P in the epitaxial wafer are not proportional to the proton beam density but show weaker dependence on it for more than 1 μA/cm2 of proton beam density. It is concluded, from this fact, that the generated vacancy, which is effective to enhanced diffusion, annihilates not only by the first order annihilation process but also by the higher order process such as the vacancy-interstitial direct recombination.

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