Enhanced diffusion of boron and phosphorus in silicon during hot substrate ion implantation
- 1 January 1970
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 6 (1) , 121-129
- https://doi.org/10.1080/00337577008235054
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- RADIATION-ENHANCED DIFFUSION OF BORON IN SILICONApplied Physics Letters, 1969
- Semiconductor PhysicsPublished by Elsevier ,1969
- Influence of temperature on phosphorus ion behavior during silicon bombardmentCanadian Journal of Physics, 1968
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968
- Diffusion Mechanisms and Point Defects in Silicon and GermaniumPhysica Status Solidi (b), 1968
- Ion Bombardment of Silicon in a Glow DischargeJournal of Applied Physics, 1963
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956