Numerical simulation of an AlGaAs/GaAs bipolar inversion channel field effect transistor
- 30 June 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (6) , 1023-1030
- https://doi.org/10.1016/0038-1101(88)90401-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Application of LBI techniques to the solution of the transient, multidimensional semiconductor equationsJournal of Computational Physics, 1987
- Operational silicon bipolar inversion-channel field-effect transistor (BICFET)IEEE Electron Device Letters, 1986
- The bipolar inversion channel field-effect transistor (BICFET)—A new field-effect solid-state device: Theory and structuresIEEE Transactions on Electron Devices, 1985