Photoresist development by plasma

Publisher Website
Google Scholar
Abstract
Over the past several years the semiconductor industry has placed major efforts into replacing wet processes with dry processes in fabricating electronic devices. Plasma photoresist stripping, plasma cleaning, and other dry etching techniques have replaced wet methods in many product lines. One area that has received little mention but which is vital toward achieving a totally dry manufacturing process is the dry development of photoresist. One production applicable plasma developable photoresist (PDF) process, using a proprietary resist formulation, is reported. Plasma process characterization, such as end point detection, development latitude, and mechanism are discussed. Included also are development temperature, batch film uniformity, and resolution currently obtainable with the PDF process.

This publication has 1 reference indexed in Scilit: