High-performance deep-submicrometer Si MOSFETs using vertical doping engineering
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (11) , 2639
- https://doi.org/10.1109/16.163487
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Scaling the Si metal-oxide-semiconductor field-effect transistor into the 0.1-μm regime using vertical doping engineeringApplied Physics Letters, 1991
- Design and experimental technology for 0.1-µm gate-length low-temperature operation FET'sIEEE Electron Device Letters, 1987