The calculation of temperature distribution in punch-through structures during pulsed operation using the transmission line modelling (TLM) method
- 14 October 1982
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 15 (10) , 1979-1990
- https://doi.org/10.1088/0022-3727/15/10/017
Abstract
Finite difference methods are frequently used to model heat flow in semiconductors. However space and time discretisation of the heat equation introduces errors. The transmission line modelling technique (TLM) is a useful alternative in that it solves an equivalent electrical network exactly. The extent of error depends only on how well an equivalent electrical network matches a physical problem. The TLM method has been used to model the behaviour of punch-through diodes during pulsed operation. The results indicate that the mechanism of heat dissipation within the active region of this type of device will have to be described more accurately if agreement between theory and experiment is to be obtained.Keywords
This publication has 13 references indexed in Scilit:
- Temperature rise in microwave p-i-n diodes: A computer aided analysisSolid-State Electronics, 1981
- Temperature distribution in nonlinear multilayer structures with several heat sourcesLetters in Heat and Mass Transfer, 1977
- Computer Graphics for Transient FieldsIEEE Transactions on Education, 1977
- A simple explicit and unconditionally stable numerical routine for the solution of the diffusion equationInternational Journal for Numerical Methods in Engineering, 1977
- Design concepts of high energy punchthrough structuresIEEE Transactions on Electron Devices, 1976
- Temperature transients in IMPATT diodesIEEE Transactions on Electron Devices, 1976
- An approach to the heat flow problems and transient temperature rise in nonlinear semiconductor mediaLetters in Heat and Mass Transfer, 1976
- Transient temperature rise in silicon semiconductor devicesIEEE Transactions on Electron Devices, 1975
- Thermal conductivity of silicon, germanium, III–V compounds and III–V alloysSolid-State Electronics, 1967
- The solution of transient heat flow and heat transfer problems by relaxationBritish Journal of Applied Physics, 1955