Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6) , 1187-1194
- https://doi.org/10.1109/23.124092
Abstract
No abstract availableKeywords
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