Accounting for Dose-Enhancement Effects with CMOS Transistors
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 4369-4375
- https://doi.org/10.1109/tns.1985.4334126
Abstract
Dose-enhancement effects are monitored with standard CMOS transistors by measuring thresholdvoltage shifts due to oxide-trapped charge and interface states. These results, in conjunction with studies of the effects of trapped-hole annealing and electron-hole recombination, are used to correlate the responses of transistors irradiated with Co-60 gamma rays or 10 keV X rays.Keywords
This publication has 20 references indexed in Scilit:
- Radiation effects in TaSix/polysilicon MOS gate structuresJournal of Vacuum Science & Technology B, 1984
- Correlating the Radiation Response of MOS Capacitors and TransistorsIEEE Transactions on Nuclear Science, 1984
- Predicting CMOS Inverter Response in Nuclear and Space EnvironmentsIEEE Transactions on Nuclear Science, 1983
- The Use of Low Energy X-Rays for Device Testing - A Comparison with Co-60 RadiationIEEE Transactions on Nuclear Science, 1983
- Dose Enhancement Effects in Semiconductor DevicesIEEE Transactions on Nuclear Science, 1982
- The Role of Scattered Radiation in the Dosimetry of Small Device StructuresIEEE Transactions on Nuclear Science, 1980
- Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray SourcesIEEE Transactions on Nuclear Science, 1980
- X-Ray Dose EnhancementIEEE Transactions on Nuclear Science, 1978
- Charge Yield and Dose Effects in MOS Capacitors at 80 KIEEE Transactions on Nuclear Science, 1976
- Process Optimization of Radiation-Hardened CMOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1975