Metal-oxide-semiconductor characteristics of rapid thermal processed chemical vapor deposited SiO2 gate dielectrics

This publication has 12 references indexed in Scilit:

• Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides
  IEEE Electron Device Letters, 1989
• Electrical characteristics of reoxidized-nitrided chemical vapor deposited oxides
  Applied Physics Letters, 1989
• Electrical characteristics of oxynitride gate dielectrics prepared by rapid thermal processing of LPCVD SiO ₂ films
  Electronics Letters, 1989
• Metal-oxide-semiconductor characteristics of rapid thermal nitrided thin oxides
  Applied Physics Letters, 1988
• Rapid Thermal Annealed Low Pressure Chemical‐Vapor‐Deposited SiO2 as Gate Dielectric in Silicon MOSFET's
  Journal of the Electrochemical Society, 1987
• Comparison between CVD and thermal oxide dielectric integrity
  IEEE Electron Device Letters, 1986
• Thermal nitridation of Si and SiO₂for VLSI
  IEEE Transactions on Electron Devices, 1985
• Time-dependent-dielectric breakdown of thin thermally grown SiO₂films
  IEEE Transactions on Electron Devices, 1985
• Effects of Ammonia Anneal on Electron Trappings in Silicon Dioxide
  Journal of the Electrochemical Society, 1982
• Advantages of thermal nitride and nitroxide gate films in VLSI process
  IEEE Transactions on Electron Devices, 1982