Structural Analyses of Metal/GaAs Contacts and Ge/GaAs and AlAs/GaAs Heterojunctions
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Electron microscope studies of a Ge–GaAs superlattice grown by molecular beam epitaxyJournal of Applied Physics, 1983
- Palladium on GaAs: A reactive interfaceJournal of Vacuum Science & Technology B, 1983
- Structural characterization of the interfacial reactions between palladium and gallium arsenideJournal of Vacuum Science and Technology, 1982
- High Electron Mobility Transistor LogicJapanese Journal of Applied Physics, 1981
- Interaction of evaporated palladium thin films with gallium arsenideThin Solid Films, 1981
- Alloying behavior of Ni/Au-Ge films on GaAsJournal of Applied Physics, 1980
- Contact reactions in Pd/GaAs junctionsJournal of Applied Physics, 1979
- Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlatticesJournal of Crystal Growth, 1979
- Transmission electron microscopy of interfaces in III–V compound semiconductorsJournal of Vacuum Science and Technology, 1977
- Investigation of the AuGeNi system used for alloyed contacts to GaAsSolid-State Electronics, 1977