High-performance metal–ferroelectric–insulator–semiconductor structures with a damage-free and hydrogen-free silicon–nitride buffer layer
- 26 February 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (9) , 1285-1287
- https://doi.org/10.1063/1.1351535
Abstract
We developed high-performance metal–ferroelectric–insulator–semiconductor (MFIS) structures with a damage-free and hydrogen-free Si3N4 buffer layer as an insulator. We fabricated Si3N4 films by nitriding Si substrates with N2 and/or atomic N radicals generated by an rf radical cell. In contrast to conventional Si3N4 films, the radical-nitride Si3N4 films showed no hysteresis or flat-band shift in the capacitance–voltage (C–V) characteristics even after high-temperature treatments, such as crystallization annealing of ferroelectric thin films deposited on the buffer Si3N4. Using this radical nitride Si3N4 as a buffer layer, we fabricated MFIS diodes with a Pt/Bi3.25La0.75Ti3O12/Si3N4/Si structure. These diodes had good hysteresis in their C–V characteristics, resulting from remnant polarization of the ferroelectric films. However, no other parasitic effects originating in charge trapping and/or detrapping were observed.Keywords
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