Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition
- 1 January 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (1A) , L116
- https://doi.org/10.1143/jjap.27.l116
Abstract
Photoluminescence of unintentionally doped and N-doped 3C-SiC epilayers grown on Si by chemical vapor deposition was studied. It was found that N-doped samples have different emission lines from the bound exciton emissions observed in unintentionally doped 3C-SiC epilayers. This result suggests that the residual carriers in unintentionally doped n-type 3C-SiC cannot be attributed to nitrogen atoms, which is consistent with the results obtained from the temperature dependence of the carrier density of 3C-SiC.Keywords
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