A position detector based on the lateral photoeffect in a-Si:H/ metal (Ti,Mo) multilayers
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 845-848
- https://doi.org/10.1016/0022-3093(93)91129-q
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- a-Si:H position-sensitive detector with striped metal electrodesSensors and Actuators A: Physical, 1992
- The effect of inhomogeneity size and concentration on the analysis of small-angle scattering dataJournal of Applied Crystallography, 1991
- Metal/amorphous silicon multilayer radiation detectorsIEEE Transactions on Nuclear Science, 1989
- Photoconductive a-Si: H with dominant monohydride bonding prepared by DC-Magnetron sputteringPhysica Status Solidi (a), 1988
- Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayersJournal of Applied Physics, 1987
- Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrateApplied Physics Letters, 1986