Photoconductive a-Si: H with dominant monohydride bonding prepared by DC-Magnetron sputtering
- 16 July 1988
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 108 (1) , 285-293
- https://doi.org/10.1002/pssa.2211080129
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Deposition of a-Si:H by magnetron sputter-assisted plasma-CVDJournal of Non-Crystalline Solids, 1987
- Characterization of reactively magnetron sputtered hydrogenated amorphous silicon filmsJournal of Vacuum Science & Technology A, 1986
- Dependence of properties of hydrogenated microcrystalline and amorphous silicon films prepared by planar magnetron sputtering in inert gasApplied Physics A, 1984
- Ion beam analysis of amorphous silicon films produced by magnetron sputteringPhysica Status Solidi (a), 1984
- Deposition parameters and film properties of hydrogenated amorphous silicon prepared by high rate dc planar magnetron reactive sputteringJournal of Applied Physics, 1984
- Planar magnetron sputtering of a-Si:H and a-Ge:H thin filmsJournal of Vacuum Science & Technology A, 1984
- The current-voltage characteristic of magnetron sputtering systemsJournal of Applied Physics, 1983
- Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous siliconJournal of Applied Physics, 1982
- The problem of reactive sputtering and cosputtering of elemental targetsThin Solid Films, 1982
- Infrared Spectrum and Structure of Hydrogenated Amorphous SiliconPhysica Status Solidi (b), 1980