Kinetics of self-interstitials generated at the Si/SiO2 interface
- 1 June 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (11) , 961-963
- https://doi.org/10.1063/1.93814
Abstract
The kinetics of self‐interstitials in silicon were investigated by monitoring oxidation stacking faults on backside oxidized silicon wafers in the temperature range 1100–1200 °C in a wet O2 ambient. The diffusion coefficient and thermal equilibrium concentration of self‐interstitials were obtained by optimizing model parameters to match calculated and experimental observations of growth of oxidation stacking faults at the front surface of silicon wafers protected from oxidation by a composite SiO2/poly Si/Si3N4 film.Keywords
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