Investigation of defects in weakly damaged ion implanted GaAs layers
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 445-448
- https://doi.org/10.1016/0168-583x(89)90822-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- RBS and optical investigations of defects in weakly damaged GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAsPhysica Status Solidi (a), 1986
- Laser Induced Defects in GaAs LayersPhysica Status Solidi (b), 1985
- Axial dechannelingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Radiation damage and near edge optical properties of nitrogen implanted gallium arsenidePhysica Status Solidi (a), 1982