RBS and optical investigations of defects in weakly damaged GaAs
- 1 April 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 15 (1-6) , 431-434
- https://doi.org/10.1016/0168-583x(86)90338-1
Abstract
No abstract availableKeywords
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- Radiation damage and near edge optical properties of nitrogen implanted gallium arsenidePhysica Status Solidi (a), 1982
- Carrier compensation in O+ implanted n-type GaAsSolid-State Electronics, 1980
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Ion-beam-induced annealing effects in GaAsNuclear Instruments and Methods, 1980