Ion-beam-induced annealing effects in GaAs
- 15 January 1980
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 168 (1-3) , 307-312
- https://doi.org/10.1016/0029-554x(80)91270-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The role of elevated temperatures in the implantation of GaAsSolid-State Electronics, 1975
- Disorder annealing in III–V semiconductors after ion implantation at low temperaturesRadiation Effects, 1973
- Influence of implantation temperature and surface protection on tellurium implantation in GaAsApplied Physics Letters, 1972