Disorder annealing in III–V semiconductors after ion implantation at low temperatures

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Abstract
Undoped Gap, GaAs, GaAsP, and GaSb were implanted near liquid-nitrogen temperature with 110 keV Zn ions. Implantations with O, Sb, and Xe between 110 and 150 keV were performed for comparison. The implantation-induced lattice disorder was studied without warm-up and as a function of isochronal anneal temperatures by ion channeling and backscattering measurements using 1.5 MeV He+ or 450 keV protons. For low-fluence implants where the initial disorder peak is ≲30% of the level for amorphous layer formation, the annealing is found to be characteristic only of the target compound. Broad anneal stages centered at 320, 250, and 290 K are observed for Gap, GaAs, and GaSb, respectively. GaAsP annealing occurs at temperatures intermediate between that for GaP and GaAs. For higher fluence implants, where channeling measurements indicate that an amorphous layer is formed, the disorder annealing is strikingly similar for the III-V compounds studied with a single annealing stage centered at 530 K. The scattering yields from the displaced A and B atoms can be resolved for GaP and GaSb, and no difference in the anneal recovery of the A and B sublattices is observed within the resolution of these experiments.