Lattice disorder produced in GaAs by 60 keV Cd ions and 70 keV Zn ions

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Abstract
We have used the standard channeling technique with a 1.0 MeV He+ analyzing beam to investigate the lattice disorder produced in GaAs by 60 keV Cd and 70 keV Zn ion implantations made at room temperature. The amount of disorder produced increases linearly with dose and saturates at a dose of approximately 1–2 × 1013 Cd ions/cm2. The disorder present in low dose implants (∼5 × 1012 Cd ions/cm2) anneals appreciably by 150 °C. With increasing doses of Cd or Zn the samples show a continuous increase in the anneal temperature required to remove a substantial amount of lattice disorder. There is no apparent difference between the anneal of Zn and Cd implants. The rate at which lattice disorder is produced in GaAs by heavy ion implantations and the doses of heavy ions required to saturate the lattice disorder observed are significantly different from the values of the corresponding quantities for Si and Ge.