Direct measurement of interface state electron capture cross-section in MOS system by DLTS technique
- 16 December 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 80 (2) , K209-K212
- https://doi.org/10.1002/pssa.2210800258
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Characterization of surface states in MOS capacitors by a modified DLTS techniquePhysica Status Solidi (a), 1983
- Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopyJournal of Applied Physics, 1981
- Determination of interface-state parameters in a MOS capacitor by DLTSSolid-State Electronics, 1980
- Complex nature of gold-related deep levels in siliconPhysical Review B, 1980
- A determination of interface state energy during the capture of electrons and holes using DLTSIEEE Transactions on Electron Devices, 1979
- Evidence for multiphonon emission from interface states in MOS structuresSolid State Communications, 1978
- Interface states in SiSiO2 interfacesSolid-State Electronics, 1972