Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopy
- 1 May 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (5) , 3504-3508
- https://doi.org/10.1063/1.329128
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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