Scanning electron microscope investigation of electric activity of stacking faults in silicon epitaxial layer
- 15 April 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (8) , 415-416
- https://doi.org/10.1063/1.88220
Abstract
Comparing the images of stacking faults obtained by a scanning electron microscope (SEM) with those obtained by the optical method, we found that not all of the existing faults are observed in an EBIC image of SEM and that the stacking faults which give no contrast in the EBIC image show no preferential etching in Sirtl etchant.Keywords
This publication has 3 references indexed in Scilit:
- SEM observation and contrast mechanism of stacking faults in an epitaxial silicon layerJournal of Applied Physics, 1974
- Electrically Active Stacking Faults in SiliconJournal of the Electrochemical Society, 1973
- Stacking Fault Nucleation in Epitaxial Silicon on Variously Oriented Silicon SubstratesJournal of Applied Physics, 1964