Photoelastic characterization of Si wafers by scanning infrared polariscope
- 1 July 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 229 (1-4) , 22-25
- https://doi.org/10.1016/s0022-0248(01)01043-0
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
- High-sensitivity computer-controlled infrared polariscopeReview of Scientific Instruments, 1993
- Strained silicon: A dielectric-response calculationPhysical Review B, 1992
- Simulation and observation of the images of dislocations in (100) silicon using infrared piezobirefringenceJournal of Applied Physics, 1991
- Effect of Growth Parameters on the Residual Stress and Dislocation Density of Czochralski-Grown Silicon CrystalsJournal of Applied Physics, 1971
- Intrinsic Piezobirefringence of Ge, Si, and GaAsPhysical Review B, 1969
- Infrared Studies of Birefringence in SiliconJournal of Applied Physics, 1959