Simulation and observation of the images of dislocations in (100) silicon using infrared piezobirefringence

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Abstract
A general algorithm for the simulation of dislocation images in cubic single‐crystal infrared transparent semiconductor samples using infrared piezobirefringence is presented in this paper. A data bank has been created for the simulated images of arbitrarily oriented dislocations. These images are functions of the sample orientation, the orientation of the dislocation line with respect to the crystal 〈100〉 axes, the orientation of the Burgers vector with respect to the dislocation line, and the polarization angle of the incident light. A dark‐field plane polariscope has been constructed to observe the dislocation images experimentally. In principle, a sample having any arbitrary dislocation can be placed under the polariscope and the experimental images obtained for varying polarization angles of the incident light. Then an image matching procedure between the experimentally observed and the simulated images stored in the data bank can yield the information about the dislocations present in the sample. This technique offers a superior speed advantage over the more conventional defect characterization technique of x‐ray topography. Some experimental results and their match with the theoretical ones are also presented.