Competitive kinetic processes during homoepitaxial growth on Ge(111)
- 5 April 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (14) , 1673-1675
- https://doi.org/10.1063/1.108622
Abstract
The homoepitaxial growth of Ge(111) has been investigated with reflection high-energy electron diffraction (RHEED) measurements supported by Monte Carlo simulations. At low temperatures, the RHEED oscillations show a monolayer period, while at higher temperatures the oscillation period becomes bilayer. The simulations reveal that a short-range nonthermal diffusion process is dominant at low temperatures, and that the driving force behind the transition to bilayer growth is the increasing importance of thermal diffusion.Keywords
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