Temperature dependence of optical transitions between electronic energy levels in semiconductors
- 15 February 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (7) , 4501-4510
- https://doi.org/10.1103/physrevb.49.4501
Abstract
We propose a model to describe temperature-dependent electronic transitions using an effective electron-ion interaction. We present a nonperturbative calculation of the temperature dependence of the forbidden energy gap of CdTe crystals. The results are compared with similar calculations using the statistical-function method and both give good agreement with experimental data. It is also demonstrated that the thermal expansion of the lattice plays a minor role for the temperature variation of the electronic energy levels.Keywords
This publication has 17 references indexed in Scilit:
- Electronic properties ofAcenters in CdTe: A comparison with experimentPhysical Review B, 1993
- A First-Principle Calculation of the Temperature Dependence of the Indirect Band Gap of SiliconEurophysics Letters, 1989
- Temperature dependence of band gaps in Si and GePhysical Review B, 1985
- Temperature dependence of the direct gap of Si and GePhysical Review B, 1983
- Erratum: Theory of the temperature dependence of the direct gap of germaniumPhysical Review B, 1981
- Theory of the temperature dependence of the direct gap of germaniumPhysical Review B, 1981
- Tight‐binding calculations of the valence bands of diamond and zincblende crystalsPhysica Status Solidi (b), 1975
- Temperature dependence of energy gaps in some II–VI compoundsJournal of Physics and Chemistry of Solids, 1973
- The Chemistry of Imperfect CrystalsPhysics Today, 1964
- Temperature Dependence of the Energy Gap in SemiconductorsPhysical Review B, 1951