Electronic properties ofAcenters in CdTe: A comparison with experiment
- 15 October 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (16) , 11726-11731
- https://doi.org/10.1103/physrevb.48.11726
Abstract
The temperature variation of the A-center (a cadmium-vacancy halogen-donor pair) luminescence has been calculated using a temperature-dependent electron-ion interaction. The photoluminescence lines of the A center show a pronounced shift with temperature between 4 and 50 K. The zero-phonon line is explained in terms of a donor-acceptor pair transition and the temperature dependence is not due to the thermal expansion of the CdTe crystal. It results from excitations of electrons from shallow levels of isolated halogen donors and from transitions from the conduction-band edge to the deep acceptor level of the A center.Keywords
This publication has 7 references indexed in Scilit:
- Identification of the chlorineAcenter in CdTePhysical Review B, 1992
- ODMR Investigations of A - Centres in CdTeMaterials Science Forum, 1992
- Optical and optically detected magnetic resonance investigations on the A-center complex in CdTeJournal of Crystal Growth, 1990
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981
- Cathodoluminescence studies of the 1.4 eV bands in CdTeRevue de Physique Appliquée, 1977
- The low-temperature thermal expansion and Gruneisen parameters of some tetrahedrally bonded solidsJournal of Physics C: Solid State Physics, 1975
- Self-Compensation-Limited Conductivity in Binary Semiconductors. IV.Physical Review B, 1965