Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductors
- 1 August 1981
- journal article
- research article
- Published by Taylor & Francis in Advances in Physics
- Vol. 30 (4) , 475-538
- https://doi.org/10.1080/00018738100101397
Abstract
This review covers results of recent O.D.M.R. measurements of recombination processes in layered semiconductors, II–VI compounds, at dep traps and in amorphous compounds, and includes consideration of experimental aspects.Keywords
This publication has 131 references indexed in Scilit:
- The application of optically detected magnetic resonance to the investigation of ion implanted semiconductorsJournal of Applied Physics, 1981
- Optically detected donor electron g shifts in ion-implanted ZnSeJournal of Physics C: Solid State Physics, 1980
- Pulsed optically detected resonance in semiconductorsSolid-State Electronics, 1978
- Spin orientation by optical pumping in semiconductorsSolid-State Electronics, 1978
- Spin-dependent Hall effect in semiconductorsPhysical Review B, 1975
- 2S1 / 2-State Centers in II–VI CompoundsThe Journal of Chemical Physics, 1969
- Faraday Rotation of the CaOBand and 3557 Å Zero-Phonon PeakPhysical Review B, 1968
- Localized 2S1/2‐state centres in ZnSPhysica Status Solidi (b), 1966
- An ESR Analysis of Thermally Activated Motional Effects in the ZnS-A‐CentersPhysica Status Solidi (b), 1964
- Electron Paramagnetic Resonance Studies of the ZnS-A and -B CentersThe Journal of Chemical Physics, 1962