Optically detected donor electron g shifts in ion-implanted ZnSe
- 27 November 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (33) , L999-L1004
- https://doi.org/10.1088/0022-3719/13/33/007
Abstract
In ion-implanted ZnSe the g value of the donor resonance is found to shift from the value observed in unimplanted material and this shift is accompanied by a broadening of the resonance line, which in some cases is asymmetric. The behaviour is explained in terms of the mixing of the donor wavefunction with that of defect centres lying within the donor volume. The model allows an estimate to be made of the defect concentration within the implanted layer.Keywords
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