The application of optically detected magnetic resonance to the investigation of ion implanted semiconductors

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Abstract
It is shown that optically detected magnetic resonance can be used to investigate ion‐implanted layers in semiconductors. The technique is illustrated with results for ZnSe, where resonance signals have been selectively detected from only the implanted layer. The technique allows both the nature of lattice damage and the site identification to be established. This is demonstrated with results from argon‐implanted ZnSe, where lattice damage associated with zinc vacancies has been identified. In the ZnSe samples implanted with both gallium and phosphorous ions the same lattice damage is observed as for argon implantation and, in addition, it is found that phosphorous cluster centers are formed.