Ion implantation into GaN

This publication has 133 references indexed in Scilit:

• Deformation behavior of ion-beam-modified GaN
  Applied Physics Letters, 2001
• Models and mechanisms of irradiation-induced amorphization in ceramics
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2000
• Behavior of electrically active point defects in irradiated MOCVD n-GaN
  Physica B: Condensed Matter, 1999
• Metastable-like behaviour of a sputter deposition-induced electron trap in n-GaN
  Physica B: Condensed Matter, 1999
• Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts
  Physica B: Condensed Matter, 1999
• Annealing of ion-implanted GaN
  Physica B: Condensed Matter, 1999
• Mechanical properties of the GaN thin films deposited on sapphire substrate
  Journal of Crystal Growth, 1998
• Ion implantation of Si, Mg and C into Al0.12Ga0.88N
  Solid-State Electronics, 1997
• Implantation and redistribution of dopants and isolation species in GaN and related compounds
  Solid-State Electronics, 1995
• Amorphization, morphological instability and crystallization of Krypton ion irradiated germanium
  Philosophical Magazine A, 1991