Deformation behavior of ion-beam-modified GaN
- 4 January 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (2) , 156-158
- https://doi.org/10.1063/1.1335552
Abstract
The deformation behavior of wurtzite GaN films modified by ion bombardment is studied by nanoindentation with a spherical indenter. Results show that implantation disorder significantly changes the mechanical properties of GaN. In particular, GaN amorphized by ion bombardment exhibits plastic deformation even for very low loads with dramatically reduced values of hardness and Young’s modulus compared to the values of as-grown GaN. Implantation-produced defects in crystalline GaN suppress the plastic component of deformation and significantly change the values of hardness and Young’s modulus. In addition, implantation disorder in crystalline GaN suppresses both “pop-in” events during loading and the appearance of slip traces on the sample surface as a result of indentation. This strongly suggests that slip nucleation (rather than a phase transformation) is the physical mechanism responsible for the pop-in events observed during loading of as-grown crystalline GaN.Keywords
This publication has 14 references indexed in Scilit:
- Nanoindentation of epitaxial GaN filmsApplied Physics Letters, 2000
- Damage buildup in GaN under ion bombardmentPhysical Review B, 2000
- Nanoindentation on AlGaN thin filmsJournal of Applied Physics, 1999
- Elastic and plastic properties of GaN determined by nano-indentation of bulk crystalApplied Physics Letters, 1999
- GaN: Processing, defects, and devicesJournal of Applied Physics, 1999
- Ultra-micro-indentation of silicon and compound semiconductors with spherical indentersJournal of Materials Research, 1999
- Deformation-Induced Dislocations in 4H-SiC and GaNMRS Proceedings, 1999
- High Temperature Hardness of Bulk Single Crystal GaNMRS Proceedings, 1999
- Mechanical properties of the GaN thin films deposited on sapphire substrateJournal of Crystal Growth, 1998
- Hardness and fracture toughness of bulk single crystal gallium nitrideApplied Physics Letters, 1996