Deformation-Induced Dislocations in 4H-SiC and GaN
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Polytypic Transformations in SiCSolid State Phenomena, 1997
- The Blue Laser DiodePublished by Springer Nature ,1997
- A large angle convergent beam electron diffraction study of the core nature of dislocations in 3C-SiCJournal of Materials Research, 1996
- Growth defects in GaN films on sapphire: The probable origin of threading dislocationsJournal of Materials Research, 1996
- Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN filmsApplied Physics Letters, 1996
- Polytypic transformations in SiC: the role of TEMUltramicroscopy, 1993
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978