Investigation of growth processes of ingots of silicon carbide single crystals
- 1 March 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 43 (2) , 209-212
- https://doi.org/10.1016/0022-0248(78)90169-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phaseJournal of Crystal Growth, 1976
- Epitaxial growth of CdS single crystal layers on ZnS plateletsMaterials Research Bulletin, 1969
- Vapor-Phase Growth of Single Crystals of II–VI CompoundsJournal of Applied Physics, 1961
- Direct Observation of Individual Dislocations by X-Ray DiffractionJournal of Applied Physics, 1958