High Temperature Hardness of Bulk Single Crystal GaN
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Elastic and plastic properties of GaN determined by nano-indentation of bulk crystalApplied Physics Letters, 1999
- Dynamic behavior of dislocations in InAs: In comparison with III–V compounds and other semiconductorsJournal of Applied Physics, 1998
- Defect structure in selectively grown GaN films with low threading dislocation densityApplied Physics Letters, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Hardness and fracture toughness of bulk single crystal gallium nitrideApplied Physics Letters, 1996
- Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Microplasticity during High Temperature Indentation and the Peierls Potential in Sapphire (α-Al2O3) Single CrystalsPhysica Status Solidi (a), 1993