Dynamic behavior of dislocations in InAs: In comparison with III–V compounds and other semiconductors

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Abstract
The dynamic behavior of α and β dislocations in both undoped and impurity-doped InAs crystals is investigated as a function of stress and temperature by means of the etch pit technique. Suppression of the generation of dislocations from a surface scratch is found in S doped InAs, which is interpreted in terms of dislocation locking due to impurity clusters and/or impurity-defect complexes as has been observed in other III–V compounds. α dislocations move faster than β dislocations in the undoped and impurity-doped InAs. S donors reduce the velocities of both α and β dislocations. On the other hand, Zn acceptors enhance the velocity of α dislocations and reduce the velocity of β dislocations. Such features are related to an electronic state of the dislocations in the elementary process of the motion. The measuredvelocities are expressed using a simple empirical equation as a function of stress and temperature in the same manner as for other semiconductors. The linear dependence of the activation energies for dislocation motion on the band gapenergy shows a clear distinction dependent on the group of semiconductors, i.e., the elemental and IV–IV compound, III–V compound, and II–VI compound.