The structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motion
- 20 August 1980
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 42 (2) , 213-219
- https://doi.org/10.1080/01418638008227280
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Electron states associated with partial dislocations in siliconPhysica Status Solidi (b), 1979
- Can phase shift analysis above the inelastic threshold provide unambiguous results ?Journal de Physique Lettres, 1979
- Kinkenbildung in geladenen VersetzungenPhysica Status Solidi (a), 1975
- Dissociation of near-screw dislocations in germanium and siliconPhilosophical Magazine, 1975
- Extended dislocations in germaniumPhilosophical Magazine, 1973
- Lattice distortion near vacancies in diamond and silicon. IiJournal of Physics C: Solid State Physics, 1971
- DISLOCATION ENERGY LEVEL IN SILICON FROM DISLOCATION VELOCITY MEASUREMENTSApplied Physics Letters, 1968
- Chemical Influence of Holes and Electrons on Dislocation Velocity in SemiconductorsPhysical Review Letters, 1967
- Charged Impurity Effects on the Deformation of Dislocation-Free GermaniumPhysical Review B, 1966
- Berechnung des Peierlspotentials im Diamantgitter VonPhysica Status Solidi (b), 1965