DISLOCATION ENERGY LEVEL IN SILICON FROM DISLOCATION VELOCITY MEASUREMENTS
- 1 July 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (1) , 32-34
- https://doi.org/10.1063/1.1652446
Abstract
The energy of the dislocation acceptor level in silicon has been determined from dislocation velocity measurements in n‐doped silicon using a model proposed earlier, in which the velocity is proportional to the charge on a dislocation. The dislocation level Es = 1.2±.2 eV above the valence band lies close to the conduction band edge in silicon. The proximity of Es to the conduction band is consistent with the observation that p doping at levels as high as 8 × 1019 cm−3 of acceptors has little or no influence on dislocation velocity.Keywords
This publication has 9 references indexed in Scilit:
- Change of Dislocation Velocity With Fermi Level in SiliconPhysical Review Letters, 1967
- Chemical Influence of Holes and Electrons on Dislocation Velocity in SemiconductorsPhysical Review Letters, 1967
- Die elektrischen Eigenschaften von Versetzungen in GermaniumPhysica Status Solidi (b), 1967
- Charged Impurity Effects on the Deformation of Dislocation-Free GermaniumPhysical Review B, 1966
- Trapping Processes at Dislocations in Plastically Bent GermaniumPhysica Status Solidi (b), 1966
- The electrical properties of dislocations in semiconductorsAdvances in Physics, 1963
- Anisotropic Mobilities in Plastically Deformed GermaniumJournal of Applied Physics, 1959
- Direct Observation of Individual Dislocations by X-Ray DiffractionJournal of Applied Physics, 1958
- LXXXVII. Theory of dislocations in germaniumJournal of Computers in Education, 1954