Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
- 1 July 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (7B) , L899-902
- https://doi.org/10.1143/jjap.36.l899
Abstract
No abstract availableKeywords
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