Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
- 1 October 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (10B) , L1315
- https://doi.org/10.1143/jjap.35.l1315
Abstract
We demonstrate room temperature pulsed operation of nitride based multi-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional C-face sapphire substrate. Cleavage was performed along the direction of the sapphire substrate, and the resultant facet was analyzed using an atomic force microscope (AFM) and theoretical calculation. A single peak emisson, at a wavelength of 417.5 nm, with a full width at half-maximum of 0.15 nm, was obtained. The threshold current density of the laser was 50 kA/cm2 and a voltage for the threshold current was 20 V.Keywords
This publication has 12 references indexed in Scilit:
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substratesApplied Physics Letters, 1996
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity FacetsJapanese Journal of Applied Physics, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- InGaAlP visible light laser diodes and light-emitting diodesJournal of Crystal Growth, 1994
- InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN filmsJournal of Applied Physics, 1993
- Blue-green laser diodesApplied Physics Letters, 1991
- Short-wavelength InGaAlP visible laser diodesIEEE Journal of Quantum Electronics, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986