Shortest wavelength semiconductor laser diode
- 6 June 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (12) , 1105-1106
- https://doi.org/10.1049/el:19960743
Abstract
A group III, nitride based, separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness as small as 1.5 nm, was fabricated. It shows the shortest lasing from semiconductor lasers by current injection at room temperature to date. Line width is as little as 0.15 nm.Keywords
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