InGaAlP visible light laser diodes and light-emitting diodes
- 2 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 768-775
- https://doi.org/10.1016/0022-0248(94)90905-9
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- High temperature (90°C) CW operation of 646 nm InGaAlP laser containing multiquantum barrierElectronics Letters, 1992
- Short-wavelength InGaAlP visible laser diodesIEEE Journal of Quantum Electronics, 1991
- AlGaInP visible laser diodes grown on misoriented substratesIEEE Journal of Quantum Electronics, 1991
- Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasersApplied Physics Letters, 1991
- 636 nm room temperature CW operation by heterobarrier blocking structure InGaAlP laser diodesElectronics Letters, 1990
- Room-temperature continuous-wave operation of a 640 nm AlGaInP visible-light semiconductor laserElectronics Letters, 1987
- Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- 661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layerElectronics Letters, 1985
- Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Room-temperature CW operation of AlGaInP double-heterostructure visible lasersElectronics Letters, 1985