Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition
- 20 January 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (3) , 207-208
- https://doi.org/10.1063/1.96796
Abstract
Room‐temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low‐pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24 °C were obtained for an inner stripe structure laser diode with a 250‐μm‐long and 7‐μm stripe geometry. The laser operated at up to 51 °C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cm2, was obtained with a 20‐μm stripe width laser diode under room‐temperature pulsed operation.Keywords
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