CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
- 1 September 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (9A) , L720
- https://doi.org/10.1143/jjap.23.l720
Abstract
Continuous wave operation of visible-light emitting InGaAsP injection lasers grown on GaAs0.61P0.39 substrates by liquid phase epitaxy was obtained in the temperature range of 98–197 K. Their lasing wavelength was 630 nm at 197 K. The characteristic temperature T 0 was estimated to be 58 K.Keywords
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